Ionizing Radiation Effects in MOS Oxides


AUTEUR: Timothy-R Oldham

ISBN: 9789810233266

NOM DE FICHIER: Ionizing Radiation Effects in MOS Oxides.pdf

DATE DE PUBLICATION: 2000-Mar-02 Ionizing Radiation Effects in MOS Oxides Image


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This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.

Ionizing Radiation Effects in Mos Oxides (International ...

Total ionizing dose effects in MOS oxides and devices Abstract: This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly. Published in: IEEE Transactions on Nuclear Science ( Volume: 50 , Issue: 3 ...

Ionizing radiation effects in MOS oxides (Book, 1999 ...

The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard ...